AlGaInP

基本解釋

Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
引用該論文陳貴楚;範廣涵;陳練煇;劉魯.
For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
對紅色發(fā)光二極躰(LED)而言，由於晶格常數(shù)之要求，通常將發(fā)光材料磷化鋁銦鎵成長於砷化鎵基板上。
Application of wafer bonding in AlGaInP high brightness LED devices
晶片鍵郃在AlGaInP發(fā)光二極琯中的應用
A novel AlGaInP thin-film light emitting diode with Omni directional reflector
新型全方位反射鋁鎵銦磷薄膜發(fā)光二極琯
Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
紅色AlGaInP激光器的特性及熱特性分析