AlGaInP
基本解釋
- 鋁鎵銦磷
英漢例句
- Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
引用該論文 陳貴楚;范廣涵;陳練輝;劉魯. - For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
對紅色發(fā)光二極體(LED)而言,由于晶格常數(shù)之要求,通常將發(fā)光材料磷化鋁銦鎵成長于砷化鎵基板上。 - Application of wafer bonding in AlGaInP high brightness LED devices
晶片鍵合在AlGaInP發(fā)光二極管中的應(yīng)用 - A novel AlGaInP thin-film light emitting diode with Omni directional reflector
新型全方位反射鋁鎵銦磷薄膜發(fā)光二極管 - Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
紅色AlGaInP激光器的特性及熱特性分析