secondary impact electron
常見例句
- Gate current for pMOSFETs is composed of direct tunneling current, channel hot hole, electron injection current, and highly energetic hot holes by secondary impact ionization.
柵電流由四部分組成 ：直接隧穿電流、溝道熱空穴、一次碰撞電離産生的電子注入、二次碰撞電離産生的空穴注入 。 返回 secondary impact electron