depletion approximation

基本解釋

Under the approximation of the full depletion, the calculating formulas for the width and electrical field of depletion region are obtained.
提出了熱及電場(chǎng)誘導(dǎo)的多載流子模型，在完全耗盡近似下，得出了耗盡區(qū)厚度和電場(chǎng)強(qiáng)度的計(jì)算公式。
As the method does not make depletion approximation nor ignores the influence of inversion layer charge on electric potential, it is thus exact.
這種方法既不採(cǎi)用耗盡近似，也不忽略反型電荷對(duì)電勢(shì)的影響，因而它是精確的。
The simulation shows that the expression of threshold voltage for SOI structure, using depletion approximation, is very simple and more accurate.
模擬計(jì)算還表明，對(duì)於薄矽膜的SOI結(jié)搆，用耗盡層近似推出的閾電壓公式是一個(gè)簡(jiǎn)單和比較準(zhǔn)確的公式。