depletion approximation

基本解釋

Under the approximation of the full depletion, the calculating formulas for the width and electrical field of depletion region are obtained.
提出了熱及電場誘導(dǎo)的多載流子模型，在完全耗盡近似下，得出了耗盡區(qū)厚度和電場強(qiáng)度的計(jì)算公式。
As the method does not make depletion approximation nor ignores the influence of inversion layer charge on electric potential, it is thus exact.
這種方法既不采用耗盡近似，也不忽略反型電荷對電勢的影響，因而它是精確的。
The simulation shows that the expression of threshold voltage for SOI structure, using depletion approximation, is very simple and more accurate.
模擬計(jì)算還表明，對于薄硅膜的SOI結(jié)構(gòu)，用耗盡層近似推出的閾電壓公式是一個簡單和比較準(zhǔn)確的公式。