Substrate-bias

常見(jiàn)例句

• The results showed that diffusion coefficient and diffusive distance increased w ith raising of negative substrate bias.
  結(jié)果表明擴(kuò)散系數(shù)和擴(kuò)散距離都隨著負(fù)襯底偏壓的增大而增大。
• In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
  對(duì)利用熱燈絲CVD沉積金剛石膜時(shí)負(fù)襯底偏壓增強(qiáng)金剛石的核化過(guò)程進(jìn)行了分析。
• Amorphous diamond(a-D) films deposited by filtered cathodic vacuum arc(FCVA) technology with different substrate bias were investigated.
  採(cǎi)用過(guò)濾隂極真空電弧技術(shù),通過(guò)施加不同襯底偏壓制備了非晶金剛石薄膜。
• In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
  摘要木文對(duì)熱燈絲CVD沉積金剛石膜的核化過(guò)程進(jìn)行了分析，從理論上研究了負(fù)襯底偏壓增強(qiáng)活性離子的流量。
• In this paper,the nucleation process of diamond by filament CVD was analyzed,and enhanced flux of ions by negative substrate bias was investigated in theory.
  本文對(duì)熱燈絲CVD沉積金剛石膜的核化過(guò)程進(jìn)行了分析，從理論上研究了負(fù)襯底偏壓增強(qiáng)活性離子的流量.
• Titanium nitride films were deposited on silicon(100) substrate at room temperature with various substrate bias voltages (corresponding to various impact energy) by energetic cluster impact (ECI).
  在室溫下，以矽（100）爲(wèi)襯底，在不同的襯底偏壓（即團(tuán)簇不同碰撞能量）的條件下，用荷能團(tuán)簇碰撞沉積方法制備了TiN薄膜。
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