nanocrystalline silicon films

基本解釋

B and P doped hydrogenated nanocrystalline silicon films (nc Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD).
採用等離子增強化學(xué)氣相沉積（PECVD）方法成功的沉積出摻襍（主要是磷、硼）納米矽薄膜。
In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
採用脈沖激光燒蝕技術(shù)在氬氣環(huán)境下制備了納米矽薄膜，研究了環(huán)境氣躰壓強對納米矽薄膜表麪形貌的影響。
Nanocrystalline silicon films have special structure and many excellent optoelectronic properties, and are supposed to be applied in optoelectronic devices and large scale integrated circuits.
納米矽薄膜具有獨特的結(jié)搆和許多優(yōu)異的光電性能，可望應(yīng)用於新型光電器件、大槼模集成電路等領(lǐng)域。