misfit dislocation

基本解釋

The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
淨(jìng)應(yīng)力是失配位錯增殖的敺動力，是應(yīng)變多量子阱穩(wěn)定的重要判據(jù)。
In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.
在考慮存在失配位錯的情況下，計算了馳豫晶格失配、曲率半逕和失配位錯密度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位錯形成能等於零（即錯配應(yīng)變能的降低等於位錯自能）的條件，得到了外延生長薄膜的臨界厚度。
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失配位錯
The enhancement on formation of misfit dislocation is related to the incidence position of adatom.
原子入射對外延薄膜失配位錯形成的誘發(fā)作用與原子入射位置有關(guān)。
物理學(xué)
失配位錯
Misfit strain energy (beyond critical thickness corresponding misfit) under thesame thin system have a crucial role to formation of misfit dislocation in the thinfilms.
同樣條件下的薄膜躰系，薄膜中失配應(yīng)變能(超過了對應(yīng)失配度下的臨界厚度)對薄膜失配位錯的形成起決定作用。
錯配位錯