fn tunneling

基本解釋

FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated.
分別研究了FN隧穿應(yīng)力和熱空穴（HH）應(yīng)力導(dǎo)致的薄柵氧化層漏電流瞬態(tài)特性。
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
隨著器件尺寸的迅速減小，直接隧穿電流將代替FN電流而成爲(wèi)影響器件可靠性的主要因素。
In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等電場(chǎng)區(qū)域，注入電子能通過(guò)FN電流和直接隧穿到達(dá)能被填充的陷阱，從而使漏電流産生準(zhǔn)態(tài)飽和。