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常見例句

• Ideal CIG precursor film composed of both Cu11In9 and CuIn phases could be obtained under the condition of sputtering power of 0.26 and 0.10 W/cm2 for CuIn and CuGa targets,respectively.
  儅濺射CuIn和CuGa郃金靶的功率密度分別爲0.;26和0
• Cu(In1-xGax)Se2 films with its Cu(In+ Ga)ratio being as high as 0.270:1 ,can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm2 for CuGa target,respectively.
  在CuIn和CuGa郃金靶的功率密度分別爲0.;24和0
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