thin drift region

基本解釋

Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
給出了漂移區(qū)為線性摻雜的高壓薄膜SOI器件的設(shè)計原理和方法。
For thin-film SOI-HVIC, linear drift region doping profile is adopted to satisfy a certain breakdown-voltage, but this process is too complex and its self-heating effect is obvious;
為了滿足一定的擊穿電壓，薄膜SOI高壓電路一般采用漂移區(qū)線性摻雜技術(shù)，但其工藝復(fù)雜，且自熱效應(yīng)嚴重；
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次對薄膜SOI功率器件的擊穿電壓與線性摻雜漂移區(qū)的雜質(zhì)濃度梯度的關(guān)系進行了實驗研究。