surface recombination velocity

基本解釋

Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用這些結(jié)果討論一些薄片的少子壽命和表面復(fù)合速度。
When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.
當(dāng)表面復(fù)合速率和體缺陷密度較大時(shí)，納米柱的長度不宜過大。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同時(shí)芯片表面鈍化層內(nèi)的缺陷數(shù)目也在溫度作用下增加，引起芯片表面復(fù)合速度增加。