silicon carbide substrate

基本解釋

The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
本發(fā)明公開了一種刻蝕停止層，包括在襯底上形成的含氮的碳化硅層，以及位于所述碳化硅層之上的氮化硅層。
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The influences of the fiber substrate pretreatment process and matrix densification methods on the properties of carbon fibers reinforced silicon carbide composites have been investigated.
研究了炭纖維編織增強體的預處理工藝和基體致密化工藝對炭纖維增強碳化硅基復合材料性能的影響。