shallow energy level

基本解釋

The base and emitter transit time increase and the cutoff frequency decreases at low temperature due to the trapping effect of shallow energy level impurities.
而由于淺能級雜質(zhì)的陷阱效應(yīng)，低溫下基區(qū)和發(fā)射區(qū)渡越時間變長，截止頻率下降。
Based on the consideration of this device, the paper calculates and discusses the shallow impurity energy level and optical absorption and presents: the impurity band;
本文結(jié)合這種器件計算和討論了超晶格中淺雜質(zhì)能譜和光吸收，給出了：雜質(zhì)能帶；