reverse recovery current

基本解釋

Early generation SJ devices had high reverse recovery current and failed during some reverse recovery events.
早期的sJ器件有著較大的反向恢復電流，并且在某些反向恢復的情況下易于失效。
This paper describes a method for calculating reverse recovery current parameters of the thyristor turnoff model.
本文論述了計算晶閘管關(guān)斷模型反向恢復電流參數(shù)的一種方法。
However, at turn-off, the diode current reverse for a reverse recovery time trr before falling to zero.
然而在關(guān)斷時，二極管的電流在降至零之前有一個反向恢復時間。