Cuga

基本解釋

Ideal CIG precursor film composed of both Cu11In9 and CuIn phases could be obtained under the condition of sputtering power of 0.26 and 0.10 W/cm2 for CuIn and CuGa targets,respectively.
當(dāng)濺射CuIn和CuGa合金靶的功率密度分別為0.;26和0
Cu(In1-xGax)Se2 films with its Cu(In+ Ga)ratio being as high as 0.270:1 ,can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm2 for CuGa target,respectively.
在CuIn和CuGa合金靶的功率密度分別為0.;24和0