non-volatile semiconductor memory

基本解釋

The present application discloses a single cell non-volatile semiconductor memory device for storing two-bits of information.
本申請公開了一種單元非易失性半導(dǎo)體存儲器件，用于存儲兩位信息。
The manufacturing method of the non-volatile semiconductor memory comprises that: a tunnel oxide layer is formed on a semiconductor matrix;
所述非揮發(fā)性半導(dǎo)體存儲器的制作方法包括：在半導(dǎo)體基體形成隧道氧化層；
For example, non-volatile semiconductor memory is used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices and other devices.
舉例來說，非易失性半導(dǎo)體存儲器用于蜂窩式電話、數(shù)碼相機、個人數(shù)字助理、移動計算裝置、非移動計算裝置以及其它裝置中。