lpcvd

基本解釋

Deposition of Carbon Nanotubes Film by LPCVD and Related Field Emission Property[J].
引用該論文陳婷;孫卓;郭平生;王莉莉;黃素梅.
R. A. Levy, M. L. Green and P. K. Gallager, “Characterization of LPCVD Aluminum for VLSI process,” J. Electrochem. Soc., 1984, p.2175.
楊正杰，張鼎張，鄭晃忠，“銅金屬與低介電常數(shù)材料與制程”，毫微米通訊，第七捲，第四期，2000
This result offers a convenient and effective solution for improving thickness variation in LPCVD furnace oxide deposition processes.
這一結(jié)果為低壓化學(xué)汽相沉積得到的隧穿氧化薄膜的平坦化提供了新思路。
This paper introduced the preparation technologies and properties of CVD for Si_3N_4 films and the process of low pressure chemical vapor deposition(LPCVD).
簡(jiǎn)要介紹了Si3N4膜的制備方法及CVD法制備的Si3N4薄膜的特性;詳細(xì)介紹了低壓化學(xué)氣相淀積(LPCVD)氮化硅的工藝.
Si Quantum dots(Ti doped) have been formed by self-assembled growth on SiO_2 surfaces using the low pressure chemical vapor deposition(LPCVD) with two step annealing.
通過自組裝生長(zhǎng)并結(jié)合兩步退火處理,在SiO2表面得到了Ti摻雜的Si納米晶粒量子點(diǎn)。