lift-off technique
基本解釋
- [電子、通信與自動(dòng)控制技術(shù)]剝離技術(shù)電極剝離
英漢例句
- The lift-off technique is a method of patterning target materials on the surface of a substrate by using a sacrificial material.
剝離技術(shù)是在基底表面通過(guò)剝離無(wú)關(guān)原子而使靶材呈現(xiàn)出理想的圖案。 - An aluminum gate 100 - element CCD analog delay line has been fabricated using a lift - off technique employing an auxiliary poly-Si layer.
本文提出一種以多晶硅為輔助層的剝離技術(shù),運(yùn)用該技術(shù)已研制成功鋁柵100位CCD模擬延遲線。 - The technique is also similar to that used on aircraft, where flaps regulate the lift and stabilize the load during the most critical times such as at take-off and landing.
這與飛機(jī)上應(yīng)用的技術(shù)也很相似,在飛機(jī)最易發(fā)生事故的危險(xiǎn)階段,如起飛和著陸,飛機(jī)襟翼可以有效的調(diào)節(jié)升降和穩(wěn)定負(fù)荷。
雙語(yǔ)例句
詞組短語(yǔ)
- laser lift -off technique 激光剝離技術(shù)
- lift -off technique for high jump 跳高起跳技術(shù)
短語(yǔ)
專業(yè)釋義
- 剝離技術(shù)
Deposition of 110 nm-thick W0.95Ni0.05 metal thin film stripes on InGaAsP/InP heterostructure wafer is carried out using both RF sputtering with the substrate under a negative DC bias of 120 V and a photoresist lift-off technique.
InGaAsP/InP雙異質(zhì)結(jié)構(gòu)外延片在直流負(fù)偏壓120 V作用下,利用射頻濺射和光刻剝離技術(shù)在樣品表面淀積厚為110 nm的W0.95Ni0.05金屬薄膜應(yīng)變條,并在該應(yīng)變條下的半導(dǎo)體內(nèi)形成了對(duì)InGaAsP/InP雙異質(zhì)結(jié)構(gòu)側(cè)向光具有良好限制作用的光彈波導(dǎo)結(jié)構(gòu)。 - 電極剝離