junction depth

基本解釋

Test the junction depth and doping concentrations.
檢測(cè)擴(kuò)散結(jié)深和摻雜濃度。
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Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通過理論分析得出硅雙結(jié)型色敏器件中摻雜濃度和兩個(gè)結(jié)的結(jié)深是影響光譜響應(yīng)范圍的主要因素。
The series resistance (rs) of the PV cell may be due to the resistance of the metal contacts on the cell, ohmic losses in the front surface of the cell, impurity concentrations, or junction depth.
PV電池的串聯(lián)電阻（rs）與電池上的金屬觸點(diǎn)電阻、電池前表面的歐姆損耗、雜志濃度和結(jié)深有關(guān)。