CZSi
基本解釋
- 直拉硅
英漢例句
- The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
摘要運(yùn)用高溫-低溫-高溫三步退火的本征吸除工藝研究了鍺的存在對(duì)硅片清潔區(qū)形成的影響。 - The variety of Ge-doped CZSi band gaps
摻鍺CZSi禁帶寬度的變化 - Keywords CZSi;denuded zone;impurity;
直拉硅;潔凈區(qū);雜質(zhì); - Intrinsic Gettering Effect in Heavily Doped CZSi Wafers
重?fù)焦枰r底片的內(nèi)吸除效應(yīng) - Study of CZSi Characteristic Doped with Element Ge at Impurity Level
摻入雜質(zhì)級(jí)等價(jià)元素鍺的CZSi晶體性能研究