dielectric breakdown model

常見例句

A physical model of dielectric breakdown was presented in IC silicon dioxide films.
提出了芯片門電路硅氧化層靜電放電介質(zhì)擊穿的物理模型。
The breakdown and quench model has been proposed theoretically considering the wall charges accumulated on the dielectric layers.
考慮到電介質(zhì)表面積累的壁電荷的作用，理論上提出了擊穿—熄火方程。
On the basis of the physical model of ESD dielectric oxide breakdown of IC devices, this paper discusses the mechanism of ESD oxide breakdown when a first order voltage is applied across and oxide.
在集成電路絕緣氧化層ESD介質(zhì)擊穿物理模型的基礎(chǔ)上，討論了絕緣氧化層加上一次線性電場條件下發(fā)生介質(zhì)擊穿的機理。