catalytic chemical vapor deposition
常見例句
- Polysilicon thin films are deposited by catalytic chemical vapor deposition method. The substrate temperature is 300 ℃ and catalytic hot wire is tungsten filament.
以金屬鎢為催化熱絲，采用熱絲催化化學(xué)氣相沉積，在300℃的玻璃襯底上沉積多晶硅薄膜。 返回 catalytic chemical vapor deposition