buried channel

基本解釋

The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
該器件為三相結構，采用埋溝和三層多晶硅技術。
The 2048-element CCPD to be butted uses three-phase three-level polysilicon overlapping gate buried channel structure.
用于拼接的2048位CCPD是采用埋溝三相三層多晶硅交迭柵埋溝結構。
The project requires the construction to be carried out in various ground conditions ranging from deep buried channel of Kallang formation to Old Alluvium formation.
本工程地層為從深埋的加冷河構造通道到舊的沖積層構造，施工地層條件變化多端。