bipolar transistor

基本解釋

A self-aligned technology for bipolar transistor with a T shape electrode structure has been proposed.
敘述了一種制作雙極型晶體管的T形電極結(jié)構(gòu)自對準(zhǔn)工藝。
On a basic bipolar transistor, with ports for electrical input and output, the law applies straightforwardly.
在一般的雙極晶體管，帶有電輸入和輸出端口，這定律完全適用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文闡述了MOS系列功率器件的特性、絕緣柵雙極型晶體管和集成型功率器件技術(shù)，以及它們的應(yīng)用。

Every hybrid motor needs an inverter, and the key component inside inverters is the integrated gate bipolar transistor, or IGBT.
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雙極晶體管
This paper has designed a inverter power supply of volume 2KVA,working frequency 20KHZ. ,based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT(絕緣柵雙極晶體管)特性的基礎(chǔ)上，設(shè)計了一臺容量為2KVA、頻率為20KHZ的高頻逆變電源。
雙極型晶體管
三極管
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本儀器測試的對象為小功率晶體管,包括:各種二極管、雙極性三極管、場效應(yīng)管等。
雙極性晶體管
雙極電晶體
雙截子電晶體