band gap

基本解釋

High band gap materials.
高能隙材料。
These are photodetectors, band gap two electron volts, respond to visible light.
這是光電探測(cè)器，能帶隙為2電子伏，當(dāng)它反應(yīng)于可見(jiàn)光。
A deep negative feedback operation amplifier used in band gap reference is a common source and gate folded cascade operation amplifier with a lower offset voltage and a higher gain.
該帶隙電壓基準(zhǔn)源電路中的深度負(fù)反饋運(yùn)算放大器為低失調(diào)、高增益的折疊型共源共柵運(yùn)算放大器。

These are photodetectors, band gap two electron volts, respond to visible light.
這是光電探測(cè)器，能帶隙為2電子伏，當(dāng)它反應(yīng)于可見(jiàn)光。
麻省理工公開(kāi)課 - 固態(tài)化學(xué)導(dǎo)論課程節(jié)選
High band gap materials.
高能隙材料。
麻省理工公開(kāi)課 - 固態(tài)化學(xué)導(dǎo)論課程節(jié)選

But, by drilling a series of evenly spaced holes into the wire, Dr Lim has created a periodic structure with a band gap that blocks such light.
ECONOMIST: New-age crystals
At the moment, it affects visible light—but a small amount of tweaking should produce a band gap at a wavelength of 1.5 microns (millionths of a metre).
ECONOMIST: New-age crystals

帶隙
A photonic crystal is characteristic of "photonic band gap", in which the propagation of electromagnetic wave is highly prohibited.
它最突出的特點(diǎn)是具有“光子帶隙”,頻率處于光子帶隙中的電磁波是禁止傳播的。
能帶
At first, photonic band gap and the derived physical characteristics from band gap were the major concerns, and photonic localization was focused as well.
以往，人們所關(guān)注的是光子晶體的能帶結(jié)構(gòu)，以及能帶結(jié)構(gòu)衍生的物理特性；光子在光子晶體結(jié)構(gòu)中形成的局域化模式也是關(guān)注的重點(diǎn)之一。
能隙
Single negative materials with transmission line model, using the band gap theory, the frequency corresponding to the edge of the gap can be calculated and they are not changing with the variance of the thickness.
考慮傳輸線模型的單負(fù)材料,理論分析了單負(fù)材料光子晶體的高低帶邊頻率,發(fā)現(xiàn)零有效相位能隙及其中心頻率與厚度縮放無(wú)關(guān)。
機(jī)械工程
分步偏壓
帶隙
禁帶
能帶隙
能帶間隙

能隙
The band gap of films increase gradually from 3.03 eV before annealing treatment to 3.18 eV annealed at 900 ℃.
能隙也由退火前的3.03 eV逐漸增加到900℃退火后的3.18eV。
帶間隙
能帶隙