TDDB

基本解釋

And it should also be noted that the TDDB properties and lifetime of refractory metal gate capacitors with thinner EOT are better than those of polysilicon gate capacitors.
進(jìn)一步研究發(fā)現(xiàn)具有更薄EOT的難熔金屬柵電極PMOS電容在TDDB特性以及壽命等方面均優(yōu)于多晶硅柵電極的相應(yīng)結(jié)構(gòu).
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor,and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定電流應(yīng)力對(duì)薄柵氧化層MOS電容進(jìn)行了TDDB評(píng)價(jià)實(shí)驗(yàn),提出了精確測(cè)量和表征陷阱密度及累積失效率的方法。
Another regularity between the J-V curves and oxidation pressures was found and we blamed the oxidation pressures for the major problem.Finally, TDDB measurements were made to support our supposition.
發(fā)現(xiàn)其電流曲線也有規(guī)律性存在，而我們歸咎其主因?yàn)檠趸瘯r(shí)的壓力，最后并作了TDDB的量測(cè)來(lái)驗(yàn)證我們的假設(shè)。
TDDB Test and Parameter Extraction of Gate Oxides
柵氧化層TDDB可靠性評(píng)價(jià)試驗(yàn)及模型參數(shù)提取
EM, HCI and TDDB Test Structure Design
測(cè)試結(jié)構(gòu)設(shè)計(jì)