SiNWs

基本解釋

On the other hand, utilizing Rapid Thermal Processing (RTP) system, SiNWs were prepared on the same substrates as above.
另外，通過1150℃和1200℃下30s的快速熱處理(Rapid Thermal Processing，RTP)，在鍍金硅襯底上生長出SiNWs。
In high temperature deposition area, highly curved and tangled SiNWs, whose growth mechanism is the VLS (Vapor-Liquid-Solid) mechanism, have been obtained.However, in lower temperat...
在低溫沉積區(qū),高度定向生長的直硅納米線,規(guī)整地排列在硅襯底表面,其生長機制是氧化輔助生長機制。
Keywords thermal evaporation;SiNWs;VLS mechanism;OG mechanism;
熱蒸發(fā);硅納米線;氣-液-固機制;氧化輔助生長機制;
Silicon Nanowires (SiNWs)
硅納米線（SiNWs）
SiNW
硅納米線