SILC

常見(jiàn)例句

• The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments.
  通過(guò)實(shí)驗(yàn)研究了閃速存儲(chǔ)器存儲(chǔ)單元中應(yīng)力誘生漏電流(ILC)產(chǎn)生機(jī)理.
• The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime.
  結(jié)果表明 ;同樣EOT的Si3 N4/SiO2 stack柵介質(zhì)和純SiO2 柵介質(zhì)比較 ;前者在柵隧穿漏電流、抗SILC性能、柵介質(zhì)壽命等方面都遠(yuǎn)優(yōu)于后者 .
• stress induced leakage current(SILC)
  應(yīng)力誘生漏電流（SILC）
• Effect of Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer
  超薄氧化層中的中性陷阱對(duì)隧穿電流的影響和應(yīng)變誘導(dǎo)漏電流
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