PHEMT
基本解釋
- 贗配高電子遷移率晶體管
英漢例句
- PHEMT transistor(ATF-35143) is used in this design.
設計采用了PHEMT晶體管(ATF-35143)。 - Subsequently analyzing the principle of broadband matching technology with GaAs PHEMT model and S-paramter .
結合GaAs PHEMT模型和S端口參數(shù)分析了寬頻帶匹配技術的原理; - This article will describe followsings: Analyzed the basic physical model of pHEMT such as carrier mobility, carrier generation and recombination models.
本論文的主要工作是： 分析了諸如載流子遷移率模型、產生復合模型等pHEMT的基本物理模型以及基本工作原理； - Commercial GaAs pHEMT transistors, Agilent ATF-35143, were used in this 2-stage amplifier. At a physical temperature 15K the amplifier achieves noise temperature between 3.2K and 3.8K over 1600MHz to 1740MHz band.
該放大器采用了Agilent 公司ATF-35143 假晶高電子遷移率場效應管(pHEMT),為兩級級聯(lián)結構,頻率范圍1600MHz~1740MHz。 - The representativemanufacturing process of pHEMT and discussed such as mesa insulates process,electrode process, photoetching process, metal lift-off process passivation, andselective-wet etching process. Two special topic are founded on?
對pHEMT MMIC典型工藝制作技術如臺面隔離技術、電極形成技術、光刻技術、金屬剝離技術、鈍化技術以及柵凹槽的選擇性濕法腐蝕技術進行了研究，同時將“多層材料結構的選擇性濕法腐蝕技術”以及“氮化硅鈍化保護工藝對pHEMT性能的影響”作為專題，進行詳細研究探討，研究結果如下：