InGaAs

常見(jiàn)例句

• Crosstalk and photoactive area of InGaAs linear detector by LBIC technique[J].
  引用該論文 呂衍秋;喬輝;韓冰;唐恒敬;吳小利;李雪;龔海梅.
• The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
  以CBr_4作為碳雜質(zhì)源，采用GSMBE技術(shù)生長(zhǎng)了與InP匹配的重碳摻雜p型InGaAs材料。
• The effects of the arrangement between InAs QDs and InGaAs SRL on the optical properties of QD light emitting diodes are also investigated.
  制作成量子點(diǎn)發(fā)光二極體后，我們也觀察砷化銦量子點(diǎn)與砷化銦鎵應(yīng)力緩沖層排列的順序?qū)馓匦运a(chǎn)生的影響。
• For this reason, alternative material systems including InGaAs, InGaAlAs, and InGaAsP with different compressive strains are explored in an attempt to obtain optimal strain level.
  因此本文將研究具有不同壓縮應(yīng)力之砷化銦鎵、砷化鋁鎵銦與砷磷化銦鎵量子井結(jié)構(gòu)，進(jìn)而探討最佳的壓縮應(yīng)力值。
• Using the phototransmission spectrum technique, we have measured the phototransmissionspectra from In_xGa_(1-x)As/GaAs single quantum well samples. The clear modulation structureof different excitons in InGaAs well has been got.
  我們采用光調(diào)制透射方法從In_xGa_(1-x)As/GaAs單量子阱樣品測(cè)量了調(diào)制透射譜;得到了InGaAs量子阱中激子的清晰的調(diào)制結(jié)構(gòu).
• The Dark Current Characteristics of InGaAs PIN Photodetectors
  光電探測(cè)器的暗電流特性研究
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